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This work, carried out by the Samsung Advanced Institute of Technology (SAIT) and Sungkyunkwan University in South Korea, is rather advanced — so stick with me while I try to explain it. Basically, they start with a normal silicon wafer. They coat the wafer in a layer of germanium (Ge), and then dip the wafer in dilute hydrofluoric (HF) acid, which strips off the native (naturally forming) germanium oxide groups, leaving a “sea” of hydrogen atoms that are bonded to the germanium underneath (H-terminated germanium, in chemistry speak). The wafer is then placed into furnace, where fairly normal chemical vapor deposition (CVD) is used to deposit a layer of graphene on top of the H-terminated Ge. Finally, after a bit more baking, and cooling under vacuum, the graphene is ready to be peeled off and used in the fabrication of graphene transistors and other such devices.
Graphene
growing on H-terminated germanium. The orange circles are germanium,
the little blue dots are hydrogen, and the black dots are carbon
(graphene)
Here
I am holding a wafer of IBM’s graphene chips. This photo, and the one
at the top of the story, are unrelated to the Samsung breakthrough.
They’re just awesome photos.
These claims might sound hyperbolic, but to be fair this is probably the most exciting graphene breakthrough that I’ve written about in the last three years. This process gets us very close to commercial, large-scale production of high-quality, electronics-grade graphene. [Read: The wonderful world of wonder materials.] This doesn’t mean that we’ll suddenly see computer chips made out of graphene instead of silicon, though — we still haven’t found a way of giving graphene a bandgap, which means it’s actually fairly useless as far as digital computing goes. We might see some graphene-based wireless modems capable of ludicrous performance, though.
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